High-impedance intrinsic silicon High-resistance silicon wafer High-impedance intrinsic silicon substrate High-impedance silicon window High-resistance silicon window

High-impedance intrinsic silicon High-resistance silicon wafer High-impedance intrinsic silicon substrate High-impedance silicon window High-resistance silicon window
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High-impedance intrinsic silicon  High-resistance silicon wafer  High-impedance intrinsic silicon substrate  High-impedance silicon window High-resistance silicon window

Product Introduction     

Apart from synthetic diamond, the high-resistance intrinsic silicon (high-resistance silicon) material is an ideal isotropic crystal material suitable for a wide range from (1.2 µm) to mm (1000 µm or even 8000 µm) wavelengths. Compared to diamond, it is much cheaper and easier to grow and manufacture. Moreover, it has a larger size and is easier to manufacture. The rapid development of THz technology is based on this advantage. For THz applications, we provide High Resistivity Float Zone Silicon (HRFZ-Si) high-resistance intrinsic silicon material with a transmittance of 50-54% at 1000 µm (for longer wavelengths, 3000 or even 8000 micrometers) and related optical components.

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The dielectric constant of synthesized electrolyte silicon is determined by conductivity (for example: free electron-carrier concentration). Figure 3 shows the dielectric constant of silicon at different purity levels at 1 THz. The dielectric constant of low-doped silicon is close to the actual value and is approximately equal to the high-frequency dielectric constant. As the doping concentration increases, the actual dielectric constant becomes negative and cannot be ignored. The dielectric constant characterizes the transmission loss characteristics of THz waves. The loss coefficient can be calculated using the following formula: tanδ = 1/(ω*εv*ε0*R), where ω - angular frequency, εv - dielectric constant in a vacuum (8.85*10-12 F/m), ε0 - dielectric constant of silicon (11.67), and R is the resistance value. For example, at 1 THz, the loss coefficient of HRFZ-Si with a resistance value of 10 kOhm is 1.54*10-5.

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Test data of a 1mm-thick high-resistance intrinsic silicon window sheet for thz time-domain spectrometer

High-impedance intrinsic silicon product

- High-impedance silicon substrate / base / window

- High-impedance silicon spherical lens

- High-impedance silicon beam splitter mirror

- High-impedance silicon lens

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High-Resistance Silicon Substrate 

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High-Resistance Silicon Fabry-Perot Etalon

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High-Resistance Silicon THz Hemispherical Lens 

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High-Resistance Silicon THz Bullet-Shaped Lens

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High-Resistance Silicon Lens  

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High-Resistance Silicon Prism

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