EN
EN
Free-Space 800nm/1064nm THz Photoconductive Antenna
Product Introduction
The thz photoconductive antenna is composed of microstrip photoconductive antennas (PCA) fabricated on a low-temperature grown gallium arsenide (LT-GaAs) substrate. Depending on the wavelength of the pumping laser, either low-temperature grown gallium arsenide (LT-GaAs) or gallium bismuth arsenide (GaBiAs) is selected as the photoconductive material. The surface is metallized using the gold-germanium-nickel (AuGeNi) process to form a coplanar Hertzian dipole antenna structure. While maintaining the optimal bandwidth, the geometric structure of the thz photoconductive antenna and the characteristics of the photoconductive layer were optimized to achieve the highest thz radiation output efficiency. The results show that when a pumping laser with an output power of 30 milliwatts and a pulse width of less than 150 femtoseconds is used, the typical thz radiation output power can exceed 10uw.
The typical spectrum diagram of the photoconductive antenna. The left figure shows the spectrum of the LT-GaAs antenna, and the right figure shows the spectrum of GaBiAs
Test of output power of photoconductive antenna. The left figure shows the power output characteristic of the LT-GaAs thz antenna, and the right figure shows the power output characteristic of the GaBiAs thz antenna
(The power meter used for the above power measurement is the Golay Cell from TYDEX)
Product Feature
——> Based on the low-temperature grown gallium arsenide (LT-GaAs) or gallium bismuth arsenide (GaBiAs) photodiode materials
——> Optimized design for wavelengths of 800 nanometers or around 1060 nanometers
——> Wide spectral range and low noise
——> The time resolution is at the picosecond level.
——> Including technical manual and test report
The thz emitter receives the laser beam from the panel side and the laser beam needs to be focused between the two electrodes (Figure 1). The gap between the metal contacts is larger than the size of the laser spot. The thz radiation is collected by an integrated lens, which is made of high-resistance silicon (HRFZ-Si) and is installed on the XY workbench (Figure 2). TERAVIL provides two standard types of such lenses, respectively adapted for convergent or divergent thz light beam output. In the latter case, the photodiode antenna (PCA) is placed at the focal point of the silicon lens to reduce the spherical aberration of the thz beam. The adjusting screws are used to position the silicon lens at the center of the photodiode antenna (PCA). The SMA interface on the back of the housing is used to connect the thz emitter to a DC or AC bias voltage. The three M6 threaded holes can all be used to install the thz emitter on the optical platform (Figure 3).
Optoelectronic Conductive Antenna Product Specifications and Parameters
Model | THz Emission Antenna | THz Receiving Antenna | ||
EMT-8 | EMT-10 | DET-8 | DET-10 | |
Photoconductive antenna material | LT-GaAs | GaBiAs | LT-GaAs | GaBiAs |
The size of the photoconductive antenna chip | 5*1.5mm | 5*1.5mm | 5*1.5mm | 5*1.5mm |
The thickness of the photoconductive antenna chip | 600um | 600um | 600um | 600um |
Photoconductive antenna type | stripline | stripline/dipole | stripline | stripline/dipole |
Bias voltage | 300 V max, 100 V typical | 50V | 100 V max, 50 V typical | 50V |
Center frequency | 0.5THz | 0.5THz | 0.5THz | 0.5THz |
Integrate the parameters of high-resistance silicon lenses | ||||
Material | HRFZ-Si | |||
Type | Hyperhemisphere | Hyperhemisphere | Hyperhemisphere | Hyperhemisphere |
Output/Reception of THz Diffraction Angle | Collimation/Divergence | Collimation/Divergence | Collimation/Divergence | Collimation/Divergence |
High-resistance silicon lens X-Y adjustment | ±3 mm | ±3 mm | ±3 mm | ±3 mm |
Pumping laser parameters | ||||
Wavelength | 800±40 nm | 1060±40 nm | 800±40 nm | 1060±40 nm |
Repetition frequency | 20-100 MHz | 20-100 MHz | 20-100 MHz | 20-100 MHz |
Power | <50 mW | <20 mW | <50 mW | <20 mW |
Pulse width | <150 fs | <150 fs | <150 fs | <150 fs |
Photovoltaic Conductive Antenna related accessories
Model | Description | Remarks | Product Picture |
MNT | Photoconductive antenna mounting platform | Including the focusing lens of the pumping laser and the XYZ moving platform |
|
TMS-100 | THz emitter bias source | 30-70V DC or AC square wave output |
|
PAM | THz receiver current amplifier | Power-supplied preamplifier |
|
